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Dunkelströme in n-Kanal-Volumen CCD = Courants d'obscurité dans un dispositif à transfert de charges à canal n = Dark currents in n channel CCDEIGLER, H; DONTH, H.Nachrichtentechnik. Elektronik. 1984, Vol 34, Num 5, pp 176-177, issn 0323-4657Article

Etching characteristics of n⁺ poly-Si and Al employing a magnetron plasmaOKANO, H; HORIIKE, Y; YAMAZAKI, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 4, pp 482-486, issn 0021-4922, 1Article

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Influence du champ électrique sur l'effet magnétorésistif dans l'arséniure de gallium faiblement dopéKAMARA, M. S; LUKASHEVICH, M. G; STEL'MAKH, C. F et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 6, pp 1134-1136, issn 0015-3222Article

Degradation mechanism of lightly doped drain (LDD) n-channel MOSFET's studied by ultraviolet light irradiationSAITOH, M; SHIBATA, H; MOMOSE, H et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 10, pp 2463-2466, issn 0013-4651Article

Photoelectrochemistry of Culn₅S₈ and Hgln₂S₄BECKER, R. S; TAN ZHENG; ELTON, J et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 8, pp 1824-1829, issn 0013-4651Article

Analysis on interband-resonant light modulation by intersubband-resonant light in n-doped quantum wellsNODA, S; UEMURA, T; YAMASHITA, T et al.IEEE journal of quantum electronics. 1992, Vol 28, Num 2, pp 493-500, issn 0018-9197Article

Influence des déformations uniaxiales sur la position du niveau profond de l'or dans Ge-nSEMENYUK, A. K; NAZARCHUK, P. F.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 3, pp 540-542, issn 0015-3222Article

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A fast 16 bit NMOS parallel multiplierLEROUGE, C. P; GIRARD, P; COLARDELLE, J. S et al.IEEE journal of solid-state circuits. 1984, Vol 19, Num 3, pp 338-342, issn 0018-9200Article

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A 16 KBIT ELECTRICALLY ERASABLE PROM USING N-CHANNEL SI-GATE MNOS TECHNOLOGYHAGIWARA T; YATSUDA Y; KONDO R et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 3; PP. 346-353; BIBL. 13 REF.Article

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